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Specifically, the investigation in the electronic properties of dilute-As GaNAs and dilute-P GaNP alloys result in suppression of interband Auger recombination process — a known efficiency-limiting issue in the InGaN quantum well QW light emitting diode devices. In addition, extensive studies have been focused in the development of Auger recombination model taking into account the interface roughness in the QW, and analytical solutions for direct Auger recombination processes including interband Auger process for semiconductors.


Specifically, the developed Auger model with interface roughness are important to provide intuitive insight of the role of Auger recombination process in the semiconductor devices employing nanostructures. Theses and Dissertations. Electrical and Computer Engineering Commons.

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E-mail address: luoy mail. Use the link below to share a full-text version of this article with your friends and colleagues. Learn more. Various attempts are presented and discussed herein, including the different kinds of 2D materials graphene, hexagonal boron nitride, and transition metal dichalcogenides used as release layers.

Erbium doped III-Nitride semiconductors: Material synthesizing and applications

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EVA MONROY: III-nitride semiconductors

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Engineering of III-Nitride Semiconductors on Low Temperature Co-fired Ceramics

Lai Wang Corresponding Author E-mail address: wanglai mail. Zhibiao Hao Corresponding Author E-mail address: zbhao mail.

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